preliminary sidc03d30sic2 edited by infineon technologies ai ps dd hv3, l4821a , edition 1, 01.10.2001 silicon carbide schottky diode applications: smps, snubber, secondary side rectification features: revolutionary semiconductor material - silicon carbide switching behavior benchmark no reverse recovery no temperature influence on the switching behavior no forward recovery a c chip type v br i f die size package ordering code sidc03d30sic2 300v 10a 1.725 x 1.4 mm 2 sawn on foil q67050-a4163- a101 sidc03d30sic2 300v 10a 1.725 x 1.4 mm 2 unsawn q67050-a4163- a002 mechanical parameter: raster size 1.725x 1.4 anode pad size 1.405 x 1.08 mm area total / active 2.415 / 1.548 mm 2 thickness 399 m wafer size 50 mm flat position 0 deg max. possible chips per wafer 695 pcs passivation frontside photoimide anode metalization 3200 nm al cathode metalization 1400 nm ni ag ?system suitable for epoxy and soft solder die bonding die bond electrically conductive glue or solder wire bond al, 350m reject ink dot size ? 3 0.3 mm recommended storage environment store in original container, in dry nitrogen, < 6 month
preliminary sidc03d30sic2 edited by infineon technologies ai ps dd hv3, l4821a , edition 1, 01.10.2001 maximum ratings parameter symbol condition value unit repetitive peak reverse voltage v rrm 300 surge peak reverse voltage v rsm 300 v continuous forward current limited by t jmax i f 10 single pulse forward current ( depending on wire bond configuration) i fsm t c =25 c, t p =10 ms sinusoidal 36 maximum repetitive forward current limited by t jmax i frm t c = 100 c , t j =150 c, d=0.1 45 non repetitive peak forward current i fmax t c =25 c, tp=10s 100 a operating junction and storage temperature t j , t stg -55...+175 c static electrical characteristics ( tested on chip), t j =25 c, unless otherwise specified value parameter symbol conditions min. typ. max. unit reverse leakage current i r v r =300v t j =25 c 15 200 a forward voltage drop v f i f =10a t j =25 c 1.5 1.7 v dynamic electrical characteristics , at t j = 25 c, unless otherwise specified, tested at component value parameter symbol conditions min. typ. max. unit total capacitive charge q c i f =10a di/dt=200a/ m s v r =200v t j = 150 c 23 nc switching time t rr i f =10a di/dt=200a/ m s v r = 200v t j = 150 c n.a. ns v r =0v 600 v r =150v 55 total capacitance c i f =10a di/dt=200a/ m s t j =25 c f=1mhz v r =300v 40 pf
preliminary sidc03d30sic2 edited by infineon technologies ai ps dd hv3, l4821a , edition 1, 01.10.2001 chip drawing:
preliminary sidc03d30sic2 edited by infineon technologies ai ps dd hv3, l4821a , edition 1, 01.10.2001 further electrical characteristics: this chip data sheet refers to the device data sheet infineon technologies spd10s30 description: aql 0,65 for visual inspection according to failure catalog electrostatic discharge sensitive device according to mil-std 883 test- normen villach/ prffeld published by infineon technologies ag bereich kommunikation st.-martin-strasse 53 d-81541 mnchen ? infineon technologies ag 2000 all rights reserved. attention please! the information herein is given to describe certain components and shall not be considered as warranted characteristics. terms of delivery and rights to technical change reserved. we hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. infineon technologies is an approved cecc manufacturer. information for further information on technology, delivery terms and conditions and prices please contact your nearest infineon technologies office in germany or our infineon technologies representatives world-wide ( see address list). warnings due to technical requirements components may contain dangerous substances. for information on the types in question please contact your nearest infineon technologies office. infineon technologies components may only be used in life-support devices or systems with the express written approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. life support devices or systems are intended to be implanted in the human body, or to support and / or maintain and sustain and / or protect human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
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